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HiPerFASTTM IGBT
IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load, L = 300 H TC = 25C
Maximum Ratings 600 600 20 30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 W C C C V V V V A A A A
TO-263 AA (IXGA)
G E
C (tab)
TO-220 AB (IXGP)
G
C
E
G = Gate E = Emitter
C = Collector TAB = Collector
Mounting torque with screw M3 Mounting torque with screw M3.5
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 300 g C Features
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
* Very high freqency IGBT * New generation HDMOS process * International standard package JEDEC TO-220AB and TO-263AA * High peak current handling capability
TM
Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IC = 250 A, VGE = 0 V IC = 250 A, VGE = VGE VCE = 0.8, VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = ICE90, VGE = 15
Characteristic Values Min. Typ. Max. 600 2.5 TJ = 25C TJ = 125C 5.0 200 1 100 2.1 2.7 V V A mA nA V
Applications
* PFC circuits * AC motor speed control * DC servo & robot drives * Switch-mode and resonant-mode power supplies * High power audio amplifiers
Advantages
* Fast switching speed * High power density
97534B (2/02)
(c) 2002 IXYS All rights reserved
IXGA12N60C
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.25 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 300 H VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz 860 64 15 32 10 10 20 20 60 55 0.09 20 20 0.15 85 85 0.27 180 180 0.60 1.25 pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns Characteristic Values Min. Typ. Max. 7 11 S
IXGP12N60C
TO-220 AB Dimensions
Pins: 1 - Gate 3 - Emitter
2 - Collector 4 - Collector Bottom Side
TO-263 AA Outline mJ K/W K/W
1. 2. 3. 4.
Min. Recommended Footprint (Dimensions in inches and mm)
Gate Collector Emitter Collector Bottom Side
Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R
Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGA12N60C
50
TJ = 25C VGE = 15V 13V 11V
IXGP12N60C
100
TJ = 25C
40
80
VGE = 15V
IC - Amperes
IC - Amperes
13V
30
9V
60
11V
20
7V
40
9V
10
20
7V 5V
5V
0 0 2 4 6 8 10
0
0
4
8
12
16
20
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
Fig. 2. Extended Output Characteristics
50
TJ = 125C
1.75
VGE = 15V
13V 11V
VGE = 15V
IC = 24A
VCE (sat) - Normalized
40
1.50
IC - Amperes
30
9V
1.25
IC = 12A
20
7V
1.00
IC = 6A
10
5V
0.75
0 0 2 4 6 8 10
0.50 25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
30
VCE = 10V f = 1Mhz
25
1000 Capacitance - pF
Ciss
IC - Amperes
20 15 10
TJ = 125C
100
Coss Crss
10
5
TJ = 25C
0 3 4 5 6 7 8 9 10
1 0 5 10 15 20 25 30 35 40
VGE - Volts
VCE-Volts
Fig. 5. Saturation Voltage Characteristics
Fig. 6. Junction Capacitance Curves
(c) 2002 IXYS All rights reserved
IXGA12N60C
1.5
TJ = 125C
IXGP12N60C
3
3
RG = 10
1.5
TJ = 125C IC =24A
E(OFF) - milliJoules
E(ON) - millijoules
E(OFF) - millijoules
1.0
E(ON)
E(ON) - millijoules
2
1.0
E(ON) E(OFF) E(ON) IC = 12A E(OFF) IC = 6A E(OFF)
2
E(OFF)
0.5
1
0.5
E(ON)
1
0.0
0 5 10 15 20
0 25
0.0
0
10
20
30
40
50
0 60
IC - Amperes
RG - Ohms
Fig. 7. Dependence of EON and EOFF on IC.
Fig. 8. Dependence of EON and EOFF on RG.
16
IC = 12A VCE = 300V
100
24
12
IC - Amperes
VGE - Volts
10
TJ = 125C
RG = 4.7 dV/dt < 5V/ns
8
1
4
0 0 10 20 30 40 50
0.1 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
1
D=0.5 D=0.2
ZthJC (K/W)
D=0.1
0.1 D=0.05
D=0.02 D=0.01
0.01
D = Duty Cycle Single pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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